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HiPer's Proprietary GaN Technology
Key Features
- Reliable gate
- Ultra low FOM
- > 1 MHz switching
- Kelvin source pin
Medium Voltage — GaN E-mode HEMT
| VBD (V) | RDS(on) (mΩ) | Package Type | Status |
|---|---|---|---|
| 100 | 1.5 – 8 | DFN, LGA | Under Development |
| 150 | |||
| 200 |
High Voltage — GaN E-mode HEMT
| VBD (V) | RDS(on) (mΩ) | Package Type | Status |
|---|---|---|---|
| 650 | 20 – 200 | DFN, TOLL | Under Development |
∗ Please contact us for product availability, samples, and datasheets. Thank you!
From Consumer to Automotive
SiC MOSFET
Key Features
- Superior gate oxide reliability
- Avalanche ruggedness
- Robust intrinsic diode with low Qrr
- Fast switching
- 175°C rated
SiC MOSFET
| VBD (V) | RDS(on) (mΩ) | Package Type | Status |
|---|---|---|---|
| 750 | 20 – 40 | TOLL, TO-247-4L | Mass Production |
| 1200 | 40 / 80 | TO-247-4L | Mass Production |
| 1200 | 13 – 20 | TO-247-4L | Under Development |
∗ Please contact us for samples, detailed datasheets, and pricing. Thank you!
Built for High Power
Target Applications
Consumer
- Laptop
- TV
- Wireless Charging
- Audio Amplifier
Data Centers
- Server Power
- UPS Systems
Renewable Energy
- Solar Inverters
- Energy Storage
Electric Vehicles
- On-board Chargers
- DC-DC Converters
- Inverters